Amorphous silicon electrophotographic photosensitive materials
US4555464A · kind A · utility
19Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1984 |
| Grant date | Nov 26, 1985 |
| Priority date | — |
| Expiry date | Jul 6, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/08
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photosensitive material comprising a conductive support having thereon, in succession, a photoconductive layer composed of an amorphous material containing silicon atom and a barrier layer mainly composed of carbon and silicon, nitrogen and silicon, or oxygen and silicon, and further on the barrier layer a surface improvement layer having a composition of carbon and silicon of from 0.70/1 to 0.95/1 by atomic ratio in carbon/carbon+silicon, and the composition ratio being larger than that of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.