Method of fabricating magnetic bubble memory device
US4556582A · kind A · utility
4Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1982 |
| Grant date | Dec 3, 1985 |
| Priority date | — |
| Expiry date | May 5, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a magnetic bubble memory device is disclosed in which ions are implanted in a desired portion of a surface region in a magnetic bubble film for magnetic bubbles to form a strain layer having a strain of about 1% to about 2.5%, a film is provided on the magnetic bubble film so as to cover the magnetic bubble film with the film and then the magnetic bubble film is annealed under predetermined conditions, thereby providing a practical magnetic bubble memory device having a large bias margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.