Method of fabricating magnetic bubble memory device
US4556583A · kind A · utility
3Cited by
1References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1982 |
| Grant date | Dec 3, 1985 |
| Priority date | — |
| Expiry date | May 5, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a magnetic bubble memory device is disclosed in which a desired portion of a surface region in a magnetic bubble film for magnetic bubbles is implanted with hydrogen ions with an ion dose of 2.5.times.10.sup.16 to 1.times.10.sup.17 cm.sup.-2, the surface of magnetic bubble film thus formed is covered with a film, and then the magnetic bubble film is annealed. According to this method, a reduction in propagation margin due to annealing is effectively prevented, and it is possible to form a magnetic bubble memory device of the contiguous disk type which is excellent in thermal stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.