Photoelectric device
US4556816A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1983 |
| Grant date | Dec 3, 1985 |
| Priority date | — |
| Expiry date | Jul 5, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/456
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.