Insulated type semiconductor devices
US4556899A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1982 |
| Grant date | Dec 3, 1985 |
| Priority date | — |
| Expiry date | Jun 7, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an insulated type semiconductor device, a metal member is disposed between an insulating member and a circuit element which includes a semiconductor substrate. The metal member is a composite metal member having at least two different kinds of metal layers bonded to each other. In a preferred embodiment, in order to reduce undesirable effects caused by differences in the thermal coefficients .alpha..sub.I and .alpha..sub.S of the insulating member and the semiconductor substrate, respectively, the thermal expansion coefficient of said composite metal member as a whole .alpha..sub.M is adjusted in a range between .alpha..sub.I and .alpha..sub.S.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.