Method of dry copper etching and its implementation
US4557796A · kind A · utility
31Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1984 |
| Grant date | Dec 10, 1985 |
| Priority date | — |
| Expiry date | Aug 1, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/095
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
According to this method, copper is dry etched in a glow discharge containing compounds with at least one methyl or methylene group, particularly at temperatures close to room temperature. The method is applied in particular for making conductors on or in module substrates or circuit cards, solder spots, and the wiring of magnetic thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.