Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers
US4557987A · kind A · utility
23Cited by
2References
79Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1981 |
| Grant date | Dec 10, 1985 |
| Priority date | — |
| Expiry date | Dec 8, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoconductive member having a support, amorphous charge generation and charge transport layers and a barrier layer between the support and the charge generation layer. The charge generation layer contains from 0.1 to 10 atomic percent of a conduction controlling impurity. Intermediate and surface barrier layers are also employed and additional transport layers are utilized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.