Method of making submicron circuit structures
US4557995A · kind A · utility
20Cited by
4References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1981 |
| Grant date | Dec 10, 1985 |
| Priority date | — |
| Expiry date | Oct 16, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1572
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re-establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.