Non-volatile semiconductor memory circuits
US4558432A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1982 |
| Grant date | Dec 10, 1985 |
| Priority date | — |
| Expiry date | Aug 24, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory circuits having a floating gate transistor as a non-volatile storage element are constructed with a shunt transistor across the floating-gate transistor which in the event of a short circuit between the floating gate and the transistor substrate causes the memory to go into a predetermined fail-safe condition. The circuits are cross-coupled flip-flops with a driver and a complementary driver or load connected in series in each of the circuits, one driver or complementary driver or load being a floating gate transistor such as a FATMOS. Short circuiting of the floating gate to the control gate of the floating-gate transistor gives the same fail-safe condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.