Process of etching semiconductor electrodes
US4559116A · kind A · utility
2Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1984 |
| Grant date | Dec 17, 1985 |
| Priority date | — |
| Expiry date | Jul 9, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/465
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductor electrodes whose composition varies with distance from a surface and which varying composition provides different wavelengths of electroluminescence from the different compositions may be spatially and spectrally etched. When the semiconductors are immersed in electrolytic etching solutions, imagewise exposure to electromagnetic radiation will stimulate the etching of the semiconductor when the semiconductor is voltaically connected with an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.