Method of manufacturing an infrared radiation imaging device
US4559695A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 1985 |
| Grant date | Dec 24, 1985 |
| Priority date | — |
| Expiry date | Jan 17, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1538
Abstract
An array of photovoltaic infrared radiation detector elements are formed in a body of infrared sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from the detector elements. An array of regions of a first conductivity type which form the p-n junctions of each detector element with an adjacent body part of opposite conductivity type, extend through the thickness of the body at side-walls of an array of apertures. Each aperture is associated with a detector element and is preferably formed by ion etching. These regions of the first conductivity type are electrically connected to substrate conductors in a simple and reliable manner by a metallization layer in the apertures, without rendering a significant area of the detector insensitive to radiation imaged onto the upper surface of the body. At least the back surface of the detector body (11) has a passivating layer over the area around and between the apertures, to enhance detector element performance. This back surface is secured to the circuit substrate by a layer of electrically insulating adhesive. The main body part is connec…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.