Electron and ion beam-shaping apparatus
US4560878A · kind A · utility
11Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1983 |
| Grant date | Dec 24, 1985 |
| Priority date | — |
| Expiry date | Aug 22, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3007
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electron or ion beam shaping apparatus has first aperture (28) and second aperture (30) through which the beam (20) is focused by first lens (24). Double deflection apparatus of either electromagnetic or electrostatic character is small and can be positioned between the aperture plates so that the image of both apertures can be focused on the target (16). Double deflection serves to vary spot size and shape and assures that target current density does not change while spot size is varied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.