Double mesa avalanche photodetector
US4561007A · kind A · utility
6Cited by
6References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 14, 1984 |
| Grant date | Dec 24, 1985 |
| Priority date | — |
| Expiry date | Sep 14, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
The invention relates to a photodetector wherein the avalanche region is separated from the detector surfaces by a region in which the electric field under reverse bias will be less than in the avalanche region. This photodetector includes an absorptive region having a planar surface area surrounded by a non-planar surface area. A first region overlies the planar area and a second region of opposite conductivity type overlies both the first region and the non-planar area of the absorptive region. The high electric fields are restricted to the first region which is isolated from the surfaces of the photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.