Patent · US Expired

Process for the production of coarsely crystalline silicon

US4561930A · kind A · utility

6Cited by
7References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 1984
Grant dateDec 31, 1985
Priority date
Expiry dateMar 13, 2004

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B29/605
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A process for the production of columnarly grown blocks of silicon containing coarsely crystalline regions comprising cooling a silicon melt in a mold, selectively effecting solidification at the melt surface and advancing the solidification front downwardly. The blocks can be sawed into chips, useful for solar cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.