Method of producing integrated silicon structures on isolated islets of the substrate
US4561932A · kind A · utility
29Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1984 |
| Grant date | Dec 31, 1985 |
| Priority date | — |
| Expiry date | Nov 2, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76289
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing integrated circuits is provided in which monocrystalline silicon islets are formed completely isolated from the substrate itself made from monocrystalline silicon, by a thick oxide layer. This thick oxide layer is formed in the following way: silicon islets are formed whose top and sides are protected with silicon nitride. Then the silicon is etched isotropically, which hollows out deeply under the islets. Thick oxidization then makes up the whole of the silicon under the islets. Thus isolated silicon islets are obtained of the same crystalline quality as the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.