Direct bond copper ceramic substrate for electronic applications
US4563383A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1984 |
| Grant date | Jan 7, 1986 |
| Priority date | — |
| Expiry date | Mar 30, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin, direct bond copper ceramic substrate of high strength and good thermal conductivity and suitable for high temperature thick film processing is described. It comprises two outer layers of alumina of equal thickness and matching dimensions for bending stress equalization, and an inner copper core, itself formed of three component layers, bonded by a copper oxygen eutectic between the layers of alumina. The thickness of the copper core is held between one-tenth and one-third the thickness of the substrate. The laminated structure, which permits recycling for high temperature thick film processing, sustains stresses at working temperatures, strengthening the substrate, and provides high thermal conductivity for heat management in a high density environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.