Image pick-up tube target
US4563611A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 1983 |
| Grant date | Jan 7, 1986 |
| Priority date | — |
| Expiry date | Nov 2, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/456
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A photoconductive image pick-up tube target comprises a transparent substrate, an N-type conductive film formed on the transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type conductive film and containing Se, As and Te as sensitizer. The P-type photoconductive film includes a first layer contiguous to the N-type conductive film and containing 94.+-.1% by weight of Se and 6.+-.0.5% by weight of As, a second layer formed on the first layer and containing 64.+-.4% by weight of Se, 3.+-.0.5% by weight of As, and 33.+-.2% by weight of Te, a third layer formed on the second layer and containing Se and As, and a fluoride doped region extending over the first layer and a front half layer of the second layer and having a fluoride concentration of 0.1 to 3.0% by weight. The third layer has an As concentration which has a peak of 28.+-.1% by weight at a site contiguous to a rear half layer of the second layer and reduces gradually.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.