Method for producing a semiconductor device
US4564416A · kind A · utility
10Cited by
7References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 8, 1981 |
| Grant date | Jan 14, 1986 |
| Priority date | — |
| Expiry date | Dec 8, 2001 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor device comprising a semiconductor substrate exhibiting defect density of 10.sup.5 /cm.sup.2 or more when the central portion of the substrate is observed through an optical microscope after the substrate is heat-treated at 1,050.degree. C. for 18 hours and etched along a section thereof across the thickness thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.