Pure silver ohmic contacts to N- and P- type gallium arsenide materials
US4564720A · kind A · utility
8Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 13, 1983 |
| Grant date | Jan 14, 1986 |
| Priority date | — |
| Expiry date | May 13, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.