Patent · US Expired

Method of making a semiconductor read only memory

US4565712A · kind A · utility

53Cited by
16References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 23, 1984
Grant dateJan 21, 1986
Priority date—
Expiry dateMay 23, 2004

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldControl
  • WIPO sectorInstruments

Abstract

A semiconductor read only memory having a plurality of MOS transistors and polycrystalline or amorphous silicon resistances connected to the source or drain regions of the MOS transistors, laser beams irradiating selected silicon resistances to thermally activate those resistances and store the required data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.