Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
US4565747A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 9, 1984 |
| Grant date | Jan 21, 1986 |
| Priority date | — |
| Expiry date | Nov 9, 2004 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Boron nitride containing titanium nitride in an amount of 0.05 to 10 wt. % which is produced at a relatively low temperature, utilizing a chemical vapor deposition technique. In the deposition process, boron, titanium and nitrogen source gases are introduced into an evacuated reactor together with a carrier and/or diluent gas and contacted with a heated substrate previously mounted in the reactor, whereby boron nitride with titanium nitride is deposited onto the substrate. The deposit thus obtained has a high density, a significantly improved heat-shielding ability, a high degree of anisotropy with respect to thermal diffusivity and a high chemical stability. By using such anisotropic boron nitride with BN ceramics, very useful BN type composite ceramics can be produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.