Matrix infrared detector

US4566024A · kind A · utility

Assignee

• Societe Anonyme de Telecommunications - SAT · FR

Inventors

• Joël FLEURY · Lille, FR
• Jacques H. P. Maille · Paris, FR

Key dates

• Filing date: Aug 6, 1982
• Grant date: Jan 21, 1986
• Expiry date: Aug 6, 2002

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/184

Abstract

The detector of the invention comprises a first semi-conductor wafer of type n, or p, with zones of type p, or n, extending from one to the other of the two faces of the wafer, and a second wafer for processing the signals delivered by the wafer exposed to the infrared radiation. The zones of the first wafer are connected to the face of the second wafer facing the first wafer by studs extending along the face of the first wafer facing the second wafer. The invention makes it possible to obtain an infrared detector for a camera which is quick and economical to manufacture.