Rapid thermal annealing of silicon dioxide for reduced electron trapping
US4566913A · kind A · utility
18Cited by
4References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 1984 |
| Grant date | Jan 28, 1986 |
| Priority date | — |
| Expiry date | Jul 30, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C.-800C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.