Utilizing interdiffusion of sequentially deposited links of HgTe and CdTe
US4566918A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1984 |
| Grant date | Jan 28, 1986 |
| Priority date | — |
| Expiry date | Aug 16, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/16
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of Cd.sub.x Hg.sub.1-x Te is grown on a substrate by growing layers of HgTe t.sub.1 thick, and CdTe t.sub.2 thick alternately. The thicknesses t.sub.1 and t.sub.2 combined are less than 0.5 .mu.m so that interdiffusion occurs during growth to give a single layer of Cd.sub.x Hg.sub.1-x Te. The HgTe layers are grown by flowing a Te alkyl into a vessel containing the substrate and filled with an Hg atmosphere by an Hg bath. The CdTe layers are grown by flowing of Cd alkyl into the vessel where it combines preferentially with the Te on the substrate. Varying the ratio of t.sub.1 to t.sub.2 varies the value of x. Dopants such as alkyls or hydrides of Al, Ga, As and P, or Si, Ge, As and P respectively may be introduced to dope the growing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.