Method for manufacture of insulating film and interface between insulation film and semiconductor
US4567061A · kind A · utility
27Cited by
6References
3Claims
0Family size
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Key dates
| Filing date | Jul 30, 1984 |
| Grant date | Jan 28, 1986 |
| Priority date | — |
| Expiry date | Jul 30, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulation film of improved properties and an interface of similarly improved properties between the insulation film and a semiconductor are produced by heating silicon, a silicon compound or a silicon dioxide film in an atmosphere formed by incorporating a carbon fluorine gas into an oxidative gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.