Light induced chemical vapor deposition of conductive titanium silicide films
US4568565A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 1984 |
| Grant date | Feb 4, 1986 |
| Priority date | — |
| Expiry date | May 14, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28052
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Conductive titanium silicide-containing films and composites comprising substrates and the film are produced by light induced chemical vapor deposition. The process eliminates the need to anneal the silicide film in order to produce a conductive film and overcomes the problem of substrate damage associated with high temperature deposition processes. The process comprises the steps of: exposing gas phase reactants comprising a titanium halide and a silicon containing compound to high intensity light; exposing a preheated substrate to the exposed gases to cause a conductive titanium silicide film to be formed thereon; and, maintaining the substrate, throughout the process, at a temperature below that temperature which would induce a thermal reaction between the gas phase reactants. The films and composites produced by the process are particularly suited for use in VLSI and VVLSI production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.