Electrophotographic photosensitive member and method for making such a member containing amorphous silicon
US4568622A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1984 |
| Grant date | Feb 4, 1986 |
| Priority date | — |
| Expiry date | Jun 15, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photosensitive member has a conductive substrate, a first layer structure with a single layer made mainly of amorphous silicon formed on the substrate, and a second layer structure including multiple layers also mainly made of amorphous silicon layered in succession on the first layer structure. The plurality of second layers includes at least two high resistance layers having a relatively high resistance value and at least one low resistance layer having a relatively low resistance value compared to the high resistance value. The layers of the second layer structure are layered alternately on the first layer structure so that the first and last layers in the second layer structure are high resistance layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.