Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing ion implantation
US4569120A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1983 |
| Grant date | Feb 11, 1986 |
| Priority date | — |
| Expiry date | Mar 7, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In fabricating a PROM cell, an electrical isolation mechanism (44 and 32) is formed in a semiconductive body to separate islands of an upper zone (36) of first type conductivity (N) in the body. A semiconductor is introduced into one of the islands to produce a region (48) of opposite type conductivity (P) that forms a PN junction with adjacent semiconductive material of the island. Ions are implanted to convert a surface layer (60) of the region into a highly resistive amorphous form which is irreversibly switchable to a low resistance state. A path of first type conductivity extending from the PN junction through another of the islands to its upper surface is created in the body to complete the basic cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.