Method and apparatus for the selective, self-aligned deposition of metal layers

US4569743A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Thomas Bayer · Igersheim, DE
• Georg Kraus · Konz, DE
• Ulrich Kuenzel · Tübingen, DE
• Gisela Renz · Grafenau, DE
• Rolf Schaefer · Mainz, DE

Key dates

• Filing date: Sep 10, 1984
• Grant date: Feb 11, 1986
• Expiry date: Sep 10, 2004

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K3/146
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

A method and apparatus for the selective deposition of metal layers on a substrate. At least one metal layer is deposited in a self-aligned manner on conductive regions on the surface of isolating or semiconductive substrates, for which purpose the conductive regions are arranged facing a metal plate having at least one layer of the metal to be deposited, and Tesla currents are generated between the metal plate and the regions to be coated. The apparatus for implementing the method includes a metal plate, a Tesla transformer which is coupled to the metal plate or to a metal grid, spaced apart from the surface of the metal plate away from the conductive regions, having closely adjacent and regularly distributed spikes pointing towards the metal. This method may be used, for example, to produce conductors on or in ceramic modules, circuit cards and semiconductor elements.