MBE Source bakeout system
US4569829A · kind A · utility
4Cited by
1References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 1983 |
| Grant date | Feb 11, 1986 |
| Priority date | — |
| Expiry date | Nov 10, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A molecular beam epitaxy system including a growth chamber and an analysis chamber, both connected to ultrahigh vacuum pump systems. The analysis chamber includes a source outgassing mount, so that, while growth is proceeding in the growth chamber, a newly received source can be outgassed in the special mount connected to the analysis chamber. Preferably the exhausted cryogenic gases from the cryo shield in the growth chamber are used to cool the source outgassing mount on the analysis chamber, to minimize the contamination of the analysis chamber by contaminants outgassed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.