Method of forming deposition film
US4569855A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1985 |
| Grant date | Feb 11, 1986 |
| Priority date | — |
| Expiry date | Apr 11, 2005 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a deposition film, wherein a gaseous atmosphere of a silicon compound selected from PA1 (i) a silicon compound having at least one azo group directly bonded to a silicon atom and PA1 (ii) a silicon compound having at least one azide group directly bonded to a silicon atom is formed in a deposition chamber in which a substrate is placed, said compound is excited and decomposed utilizing light energy, and a deposition film containing silicon atoms is formed on said substrate. A compound containing atoms of a group III element or a group V element of the Periodic Table may be included in the atmosphere in the deposition chamber, the compounds excited and decomposed utilizing light energy, and a deposition film containing silicon atoms and the atoms in the group III or V element of the Periodic Table formed on said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.