Method of producing titanium nitride MOS device gate electrode
US4570328A · kind A · utility
618Cited by
8References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1983 |
| Grant date | Feb 18, 1986 |
| Priority date | — |
| Expiry date | Mar 7, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/971
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.