Method of forming contact to thin film semiconductor device
US4570332A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 9, 1983 |
| Grant date | Feb 18, 1986 |
| Priority date | — |
| Expiry date | May 9, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for making an electrode on a desired region of a thin film semiconductor layer having a junction therein and deposited on a conductive surface comprising the steps of applying an electrical pulse signal across the semiconductor layer at the desired region to lower the resistivity of the region and then forming an electrode film on the desired region of said semiconductor layer opposite said conductive surface, is disclosed. In one alternative embodiment, an electrode film is formed on the thin film semiconductor layer and thereafter an electrical pulse signal is applied across the semiconductor layer at the desired region to lower the resistivity of the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.