Titanium disulfide thin film and process for fabricating the same
US4572873A · kind A · utility
28Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1985 |
| Grant date | Feb 25, 1986 |
| Priority date | — |
| Expiry date | Feb 19, 2005 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45.degree., and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl.sub.4 and H.sub.2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.