Photocorrosion resistant semiconductor photoelectrodes
US4574039A · kind A · utility
1Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1984 |
| Grant date | Mar 4, 1986 |
| Priority date | — |
| Expiry date | Sep 24, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor photoelectrode resistant to photocorrosion and a method of preparing such a photoelectrode are disclosed. The photoelectrode includes a doped oxide layer on which illumination falls for photo-stimulation. The oxide layer is doped with metallic ions, such as tantalum ions, to suppress photocorrosion. In one oxide doping method, tantalum pentachloride vapor generated by sublimation is directed against a silicon dioxide layer on a heated photoelectrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.