Ion beam machining device
US4574179A · kind A · utility
25Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 1984 |
| Grant date | Mar 4, 1986 |
| Priority date | — |
| Expiry date | Feb 29, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3053
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The disclosed ion beam machining device has a plasma-generating chamber, a machining chamber, and an ion-extracting grid disposed between the two chambers, which grid has an insulator layer facing the plasma-generating chamber and a conductor layer facing the machining chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.