Thin film oxygen sensor with microheater
US4574264A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1983 |
| Grant date | Mar 4, 1986 |
| Priority date | — |
| Expiry date | Nov 15, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/16
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin film oxygen sensor with a microheater incorporates an oxide semiconductor and has an integral structure of a sensor portion and a heater portion, wherein a porous catalyst layer is formed on a surface of the sensor portion, and a thickness and an average pore diameter of the catalyst layer are determined such that a ratio of the thickness to the average pore diameter falls within a range of 50 to 3,000. The oxygen sensor has good reproducibility, high stability, and high sensitivity for changing a resistance in response to a change in an oxygen content in an atmosphere. The oxygen sensor can be manufactured at low cost and has a compact construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.