Method of growing an alloy film by a layer-by-layer process on a substrate, and a method of making a semiconductor device
US4575462A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1983 |
| Grant date | Mar 11, 1986 |
| Priority date | — |
| Expiry date | Nov 17, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing an alloy film by a layer-by-layer process on a substrate is described, together with a method of making an semiconductor device in which an alloy film is grown on a substrate by a layer-by-layer process. The atomic ratio of constituents present in the alloy film is determined during growth of the film from the growth rates of the alloy film and of at least one intermediate film consisting of at least one constituent of the alloy. The intermediate film or films are grown between the alloy film and the substrate. During growth of each film, the growth surface is irradiated with a beam of electrons and measurement is carried out of the period of oscillations in the intensity of the stream of electrons diffracted at the growth surface, or specularly reflected by the growth surface, or emitted from the growth surface, or of the current flowing to ground through the substrate. These periods are equal to the respective times taken to grow on a monolayer of the respective film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.