Deep ultraviolet (DUV) flood exposure system
US4575636A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 30, 1984 |
| Grant date | Mar 11, 1986 |
| Priority date | — |
| Expiry date | Apr 30, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Apparatus for flood exposing deep ultraviolet (DUV) photoresist material from a xenon lamp source providing pulsed radiation in the DUV range formed into an annular beam by a paraboloid reflector. The radiation beam is substantially collimated with a preferred divergence of 4.degree. for mask (imaging) development. Wafers having single-layer or multi-layer photoresist material sensitive to UV radiation are flood exposed to achieve, with high resolution, imaging, even if the photoresist layers are thin. The apparatus is also used to cure DUV-sensitive photoresist material with the radiation beam having the same or preferably greater divergence. The photoresist material is flood exposed for either imaging or curing that is both rapid and uniform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.