Semiconductor laser
US4575852A · kind A · utility
7Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1983 |
| Grant date | Mar 11, 1986 |
| Priority date | — |
| Expiry date | Jun 6, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0422
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A p-type semiconductor layer and an active layer and an n-type semiconductor layer are laminated in this order onto an n-type semiconductor layer. The n-type semiconductor layer is provided with an electron injection electrode on its upper part and a narrow current path is formed in its interior with the inversion diffusion layers. A positive hole injection electrode is provided on the p-type semiconductor layer. The direction of taking out the positive hole injection layer is the same as that of the electron injection electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.