Method of fabricating integrated circuits incorporating steps to detect presence of gettering sites
US4575922A · kind A · utility
9Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 5, 1984 |
| Grant date | Mar 18, 1986 |
| Priority date | — |
| Expiry date | Nov 5, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of fabricating integrated circuits on a semiconductor substrate includes the steps of directing electromagnetic radiation onto the semiconductor substrate at a small angular offset from the substrate's Bragg angle; measuring the intensity of the radiation that is reflected from the semiconductor substrate at the offset; and continuing with the fabrication of circuits on the substrate only if the measured intensity is substantially larger than the intensity which would reflect at the same angular offset from a defect-free crystal of the substrate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.