Patent · US Expired

Etching optical surfaces on GaAs

US4576691A · kind A · utility

6Cited by

3References

11Claims

0Family size

Assignee

AT&T Bell Laboratories · US

Inventors

Paul A. Kohl · Chatham, US
Lawrence E. Smith · Indianapolis, US
Harvey S. Trop · South Plainfield, US

Key dates

Filing date	Jul 31, 1984
Grant date	Mar 18, 1986
Priority date	—
Expiry date	Jul 31, 2004

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC25F3/14
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Photoelectrochemical etching of gallium arsenide in highly alkaline aqueous solution yields optically smooth etched surfaces suitable for many optical devices. Higher optical quality is obtained for lower irradiation energy provided sufficient energy is available to produce holes in the valence band.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.