Low temperature growth of silicon dioxide on silicon
US4576829A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1984 |
| Grant date | Mar 18, 1986 |
| Priority date | — |
| Expiry date | Dec 28, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature, high power method of plasma oxidation for silicon dioxide films is disclosed. The method includes the use of magnetron electrodes which effectively increase the power density of the plasma. The effective power density should be between 1 and 15 Watts/cm.sup.2 and preferably about 6 Watts/cm.sup.2. By maintaining the substrate temperature below about 300.degree. C., and preferably at about 130.degree. C., it has been found that a high quality silicon dioxide film up to about 1000.ANG. in thickness is grown. The films produced by this process have an excellent interface with the silicon, good electrical properties and good density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.