Internally matched Schottky barrier beam lead diode
US4577213A · kind A · utility
17Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 5, 1984 |
| Grant date | Mar 18, 1986 |
| Priority date | — |
| Expiry date | Mar 5, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved internally matched Schottky barrier beam lead diode for use in millimeter wave frequency circuits. In this diode device which is made on a chip, a reactive shunt loop comprising a matching inductor and series connected capacitor is fabricated on the chip adjacent the diode and couples the ohmic beam lead to the Schottky contact beam lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.