Altering the switching threshold of a magnetic material
US4578321A · kind A · utility
10Cited by
0References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 1983 |
| Grant date | Mar 25, 1986 |
| Priority date | — |
| Expiry date | Jun 13, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/90
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A low-anisotropy magnetic material is exchange coupled in juxtaposition with a compatible body of high-anisotropy magnetic material so that a reduced external magnetic field is required for the nucleation and passage of a domain wall from the low-anisotropy material, through the interface between the low- and high-anisotropy materials, and into the high-anisotropy material. The propagation of the domain wall continues to affect a reversal in the direction of magnetization in the high-anisotropy material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.