Patent · US Expired

Circuit arrangement for driving a thyristor with a phototransistor

US4578596A · kind A · utility

4Cited by

6References

6Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Jenoe Tihanyi · Tauberbischofsheim, DE
Christine Fellinger · Unterhaching, DE
Ludwig Leipold · Munich, DE

Key dates

Filing date	Oct 24, 1984
Grant date	Mar 25, 1986
Priority date	—
Expiry date	Oct 24, 2004

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/103
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

In a circuit arrangement for drive of a thyristor with a phototransistor, the collector-emitter path of the phototransistor is between one of two alternating voltage terminals and a gate terminal of the thyristor. In order to prevent an activation of the unilluminated phototransistor due to a steep voltage edge (dv/dt) load), its base current given such a load is carried off via an IGFET of the enhancement type. This IGFET is controlled by an IGFET of the depletion type acting as a current source which lies between a gate terminal and source terminal of the enhancement type IGFET. A capacitor is connected in series with the depletion-type IGFET. This series connection lies between the two alternating voltage terminals.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.