Temperature-independent gain control circuit
US4578603A · kind A · utility
13Cited by
5References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 23, 1983 |
| Grant date | Mar 25, 1986 |
| Priority date | — |
| Expiry date | Mar 23, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G1/0029
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A temperature-independent gain control circuit includes a dual-gate MOSFET having the input signal applied to one gate and a resistance connected to the source. Control means are provided which are responsive to a control voltage to control the voltage between the other gate of the MOSFET and the end of the resistance remote from the source in such a manner as to maintain the drain current of the MOSFET proportional to the control voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.