Selective epitaxial growth method
US4579621A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 25, 1984 |
| Grant date | Apr 1, 1986 |
| Priority date | — |
| Expiry date | Jun 25, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900.degree. to 1100.degree. C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.