Structured resistive field shields for low-leakage high voltage devices
US4580156A · kind A · utility
7Cited by
9References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 30, 1983 |
| Grant date | Apr 1, 1986 |
| Priority date | — |
| Expiry date | Dec 30, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
Abstract
A segmented semi-insulating polysilicon (SIPOS) layer is used between conductors making contact to the surface of a silicon device in order to shield the surface from the effects of charge on dielectric layers above the surface so as to maintain breakdown voltages. The segmenting of the SIPOS layer significantly increases the resistance thereof and thereby limits leakage generated by the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.