Slotted diaphragm semiconductor device
US4581928A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 1, 1984 |
| Grant date | Apr 15, 1986 |
| Priority date | — |
| Expiry date | Oct 1, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01F1/699
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor body comprises (100) silicon having a (100) plane and a [110] direction. A depression is formed in a first surface of the semiconductor body which is substantially parallel to the (100) plane. A slotted diaphragm is located over the depression and comprises a layer of thin film material and a resistance film. The depression is bounded at the first surface by four perpendicular boundary edges either in line with or perpendicular to the [110] direction. The slotted diaphragm has first and second slots having a first end located at a maximum width of the depression as measured along the line oriented at substantially 45 degrees to the [110] direction. Each of the first and second slots has a second end located so that each of the first and second slots extends only a portion of the distance across the maximum width of the depression as measured along the line oriented at substantially 45 degrees to the [110] direction. The slot apparatus further comprises third, fourth, fifth and sixth slots oriented substantially in line with or substantially perpendicular to the [110] direction. There is one of the third, fourth, fifth and sixth slots located at the substantial cente…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.